FQPF34N20L Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 200V LOGIC N-Channel MOSFET

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. V_GS = 0 V
2. I_D = 250 μA
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
10²
10¹
10⁰
10^-1
10⁰
Operation in This Area
is Limited by R _DS(on)
100 µs
1 ms
10 ms
100 ms
DC
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10¹
10²
V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V_GS = 10 V
2. I_D = 17 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs. Temperature
20
16
12
8
4
0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
10⁰
1 0 ^-1
D = 0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 ^-2
s in g le p u ls e
※ N o te s :
1.
Z
θ
(t)
JC
=
2 .2 7
℃ /W
M ax.
2 . D u ty F a c to r, D = t₁/t₂
3 . T _JM - T _C = P _{D M} * Z _{θ JC}(t)
P_DM
t₁
t₂
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, June 2000