FQPF34N20L Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 200V LOGIC N-Channel MOSFET

Typical Characteristics
V
GS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
10¹
10⁰
10^-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.25
0.20
V = 5V
GS
0.15
V = 10V
GS
0.10
0.05
0.00
0
※ Note : T = 25℃
J
30
60
90
120
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
7000
6300
5600
4900
4200
3500
2800
2100
1400
700
0
10^-1
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C
iss
C
oss
C
rss
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
10¹
150℃
10⁰
25℃
10^-1
0
-55℃
※ Notes :
1. V_DS = 30V
2. 250μs Pulse Test
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃ ₂₅℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
DS
V = 100V
8
DS
V_DS = 160V
6
4
2
※ Note : I_D = 34 A
0
0
20
40
60
80
100
120
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, June 2000