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| FQPF2N70 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 700V N-Channel MOSFET | |||
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
â» Note :
1.
2.
VIDG=S =2500Vμ
A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R DS(on)
101
100 µs
1 ms
10 ms
100
100 ms
DC
10-1
10-2
100
â» Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
â» Note :
1. VGS = 10 V
2. ID = 3.1 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TC, Case Temperature [â]
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
100
0.2
0.1
0 .0 5
â» N otes :
1. Z θ JC(t) = 4.46 â /W M ax.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
1 0 -1
0 .0 2
0 .0 1
sing le pu lse
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a ve P u lse D u ra tio n [se c]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
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