FQPF2N70 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 700V N-Channel MOSFET

Typical Characteristics
Top : 15.V0^GV^S
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10⁰
10^-1
10^-1
※ Note :
1. 250μ s Pulse Test
2. T = 25℃
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
15
V = 10V
GS
12
V = 20V
GS
9
6
3
※ Note : T_J = 25℃
0
0
1
2
3
4
5
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
500
400
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C
iss
300
C
oss
200
※ Note ;
C
rss
1. V = 0 V
GS
2. f = 1 MHz
100
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
10⁰
10^-1
2
150℃
25℃
-55℃
※ Note
1.
2.
V25_DS0μ=s50PVulse
Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃ _25℃
※ Note :
1.
2.
V25_G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
12
V = 140V
DS
10
V = 350V
DS
V = 560V
8
DS
6
4
2
※ Note : I = 2 A
D
0
0
2
4
6
8
10
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, March 2003