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FQPF13N50CSDTU Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1. V =0V
2.
GS
ID =
250
μ
A
0.8
-100
-50
0
50
100
150
200
T, Junction Temperature[oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
102
is Limited by R DS(on)
10 µs
100 µs
1 ms
101
10 ms
100 ms
DC
100
10-1
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP13N50C
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 6.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
101
1 ms
10 ms
100 ms
100
DC
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for FQPF13N50C
14
12
10
8
6
4
2
0
25
50
75
100
125
150
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs Case Temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
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