FQPF13N50CSDTU Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
10¹
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10⁰
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.5
V_GS = 10V
1.0
V_GS = 20V
0.5
※ Note : T_J = 25℃
0
5
10
15
20
25
30
35
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
0
10^-1
C_iss
C_oss
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes ;
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
10¹
150^oC
25^oC
10⁰
-55^oC
10^-1
2
※ Notes :
1.
2.
V25_DS0μ=
40V
s Pulse
Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5^G0^Sμ^=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 100V
DS
10
V = 250V
DS
8
V_DS = 400V
6
4
2
※ Note : I_D = 13A
0
0
10
20
30
40
50
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, April 2003