FQP95N03L Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 30V LOGIC N-Channel MOSFET

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. V_GS = 0 V
2. I_D = 250 μ A
-50
0
50
100
150
200
T_J, Junc ion Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
10³
10²
10¹
10⁰
10^-1
Operation in This Area
is Limited by R _DS(on)
100 µs
1 ms
10 ms
DC
※ Notes
1. T_C 25 ^oC
2. T 175 ^oC
3. Single Pulse
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes
1. V_GS 10 V
2. I_D 47.5 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs. Temperature
100
80
60
Limited by Package
40
20
0
25
50
75
100
125
150
175
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
10⁰
D = 0.5
0 .2
1 0 ^-1
0 .1
0 .05
0 .02
0 .01
1 0 ^-2
sin g le p u ls e
※ N o tes
1. Z_θ
(t)
C
1.0 ℃ /W M ax.
2 . D uty F acto r, D t /t
2
3. T - T
M
C
P
DM
*
Z_θ
(t)
C
P_DM
1
2
1 0 ^-5
10^-
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001