FQP95N03L Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 30V LOGIC N-Channel MOSFET

Typical Characteristics
V_GS
Top 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
10²
4.0 V
3.5 V
Bottom 3.0 V
10¹
10^-1
※ Notes
1. 250μ s Pulse Test
2. T_C 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
20
15
V = 5V
GS
10
V = 10V
GS
5
※ Note T 25℃
0
0
200
400
600
800
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
6000
5000
C_iss C_gs + C_gd (C_ds shorted)
C_oss C_ds + C_gd
C _ss C_gd
4000
3000
2000
1000
C
oss
C
ss
C
rss
※ Notes
1. V_GS 0 V
2. f 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
10²
10¹
175℃
25℃
10⁰
10^-1
0
-55℃
※ Notes
1. V_DS 15V
2. 250μ s Pulse Test
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10²
10¹
10⁰
175℃
10^-1
0.2
0.4
25℃
※ Notes
1. V 0V
GS
2. 250μ s Pulse Test
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 15V
DS
10
V_DS = 24V
8
6
4
2
※ Note I_D 95A
0
0
10
20
30
40
50
60
70
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1. May 2001