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FQP6N40CF Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 400V N-Channel MOSFET
◁
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1.
2.
VIDG=S
=0V
250 µ
A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1.
2.
VIDG=S
=
3
10
A
V
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
for FQP6N40CF
Figure 10. Maximum Drain Current
vs. Case TemperatureF
102
Operation in This Area
is Limited by R DS(on)
10 µs
101
100 µs
1 ms
10 ms
100 ms
100
DC
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2.
3.
STJin=gl1e5P0uolCse
101
102
103
VDS, Drain-Source Voltage [V]
6
5
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 11. ransient Thermal Response Curve
100
D =0.5
0.2
0 .1
10 -1
0 .0 5
0 .0 2
0 .0 1
s in g le p uls e
※ Notes :
1.
2.
3.
Z
D
T
θu JtCy(
JM -
t) = 1 .7 1 ℃ /W M
Fa
TC
ct
=
or,
PD
D=
M*
Zt 1θ/
t2
JC
(
t
a
)
x
.
10 -2
1 0 -5
10 -4
1 0 -3
1 0 -2
10 -1
100
101
t1, S q ua re W a ve P ulse D u ra tio n [sec]
4
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FQP6N40CF Rev. A
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