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| FQP6N40CF Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 400V N-Channel MOSFET | |||
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
15V.0GSV
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
â» Notes :
1. 250µ s Pulse Test
2. TC = 25â
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VGS = 10V
VGS = 20V
â» Note : TJ = 25â
5
10
15
20
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
1200
1000
800
600
400
200
0
10-1
Ciss
Coss
Crss
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
â» Note ;
1.
2.
fV=GS1=M0HVz
100
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
101
150oC
25oC
100
-55oC
10-1
2
â» Notes :
1.
2.
V25DS0µ=
40V
s Pulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
10-1
0.2
150â
25â
â» Notes :
1.
2.
V25GS0µ=
0V
s Pulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 80V
10
VDS = 200V
8
VDS = 320V
6
4
2
â» Note : ID = 6A
0
0
5
10
15
20
QG, Total Gate Charge [nC]
3
www.fairchildsemi.com
FQP6N40CF Rev. A
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