FQP3N60C Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
♦ Notes :
1. V_GS = 0 V
2. I_D = 250 µA
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 9. Maximum Safe Operating Area
10² Operation in This Area
is Limited by R _DS(on)
10¹
10⁰
10 us
100 us
1 ms
10 ms
DC
œ Notes :
10^-1
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10^-2
10⁰
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
♦ Notes :
1. V_GS = 10 V
2. I_D = 1.5 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
3
2
1
0
25
50
75
100
125
150
T_C, Case Temperature []
Figure 11. Transient Thermal Response Curve
10⁰
D = 0.5
0.2
0.1
1 0 ^-1
0.05
œ Notes :
1 . Z _{θ JC}(t) = 1 .4  /W M a x.
2. D uty Factor, D =t₁/t₂
3 . T _JM - T _C = P _DM * Z _{θ JC}(t)
0.02
0.01
P_DM
t₁
t₂
single pulse
1 0 ^-2
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S quare W ave P ulse D uration [sec]
4
600V N-Channel MOSFET REV. A
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