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FQP3N60C Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET
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Package Marking and Ordering Information
Device Marking
FQP3N60C
Device
FQP3N60C
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
600
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
--
VDS = 480V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
2.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 1.5A
--
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 1.5A
(Note 4) --
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
--
Coss
Output Capacitance
f = 1.0MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300V, ID = 3A
RG = 25Ω
VDS = 480V, ID = 3A
VGS = 10V
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 3A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 3A
dIF/dt =100A/µs
--
--
--
--
(Note 4)
--
Typ.
--
0.6
--
--
--
--
--
2.8
3.5
435
45
5
12
30
35
35
10.5
2.1
4.5
--
--
--
260
1.6
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0
V
3.4
Ω
--
S
565 pF
60
pF
8
pF
34
ns
70
ns
80
ns
80
ns
14
nC
--
nC
--
nC
3
A
12
A
1.4
V
--
ns
--
µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 3A, VDD = 50V, L=30mH, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
600V N-Channel MOSFET REV. A
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