FQP2N60C Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
VI_DG=S =2500V_μ
A
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R _DS(on)
10¹
100 µs
1 ms
10 ms
10⁰
100 ms
DC
10^-1
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10^-2
10⁰
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP2N60C
3.0
2.5
2.0
1.5
1.0
※ Notes :
0.5
1. V_GS = 10 V
2. I_D = 2.5 A
0.0
-100
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R _DS(on)
10¹
100 µs
1 ms
10 ms
10⁰
100 ms
DC
10^-1
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10^-2
10⁰
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
for FQPF2N60C
2.4
2.0
1.6
1.2
0.8
0.4
0.0
25
50
75
100
125
150
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs Case Temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2003