FQP2N60C Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Characteristics
Top :
V_GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10⁰
5.5 V
5.0 V
Bottom : 4.5 V
10^-1
10^-2
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
12
10
8
V_GS = 10V
6
4
V = 20V
GS
2
※ Note : T_J = 25℃
0
0
1
2
3
4
5
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
500
450
400
350
300
250
200
150
100
50
0
10^-1
C
iss
C
oss
C
rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C =C
rss
gd
※ Note ;
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
10¹
150^oC
10⁰
25^oC
-55^oC
10^-1
2
※ Notes :
1.
2.
2V5^D0^Sμ^=s40PVulse
Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10⁰
150℃
25℃
※ Notes :
1.
2.
2V5^GS0μ^=s0VPulse
Test
10^-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 120V
DS
V = 300V
DS
8
V = 480V
DS
6
4
2
※ Note : I_D = 2A
0
0
2
4
6
8
10
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. A, September 2003