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| FQP20N06TSTU Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 60 V, 20 A, 60 m | |||
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
â»Notes :
1.
2.
IVDG=S =2500VμA
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
103
Operation in This Area
is Limited by R DS(on)
102
100 μs
1 ms
10 ms
101
DC
100
â» Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
10-1
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
â» Notes :
1.
2.
IVDG=S
= 10 V
10 A
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
25
20
15
10
5
0
25
50
75
100
125
150
175
TC, Case Temperature [â]
Figure 10. Maximum Drain Current
v.s Case Temperature
D =0.5
100
0 .2
0.1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
single pulse
â» N otes :
1 . Z θ JC(t) = 2 .8 5 â /W M a x.
2. D uty F actor, D = t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a ve P u lse D u ra tio n [se c]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
4
FQP20N06 Rev. C1
www.fairchildsemi.com
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