FQP20N06TSTU Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 60 V, 20 A, 60 m

Package Marking and Ordering Information
Part Number
FQP20N06
Top Mark
FQP20N06
Package Packing Method
TO-220
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
Symbol
Parameter
T_C = 25°C unless otherwise noted.
Test Conditions
Min Typ Max Unit
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = 250 μA
60
--
--
ΔBV_{DSS Breakdown Voltage Temperature}
/ ΔT_J Coefficient
I_D = 250 μA, Referenced to 25°C -- 0.07
--
I_DSS
Zero Gate Voltage Drain Current
V_DS = 60 V, V_GS = 0 V
V_DS = 48 V, T_C = 150°C
--
--
1
--
--
10
I_GSSF
Gate-Body Leakage Current, Forward V_GS = 25 V, V_DS = 0 V
--
--
100
I_GSSR
Gate-Body Leakage Current, Reverse V_GS = -25 V, V_DS = 0 V
--
--
-100
On Characteristics
V_GS(th)
R_DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
g_FS
Forward Transconductance
V_DS = V_GS, I_D = 250 μA
V_GS = 10 V, I_D = 10 A
V_DS = 25 V, I_D = 10 A
2.0 --
4.0
-- 0.048 0.06
--
12
--
Dynamic Characteristics
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
-- 450 590
-- 170 220
--
25
35
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 30 V, I_D = 10 A,
R_G = 25 Ω
--
5
20
--
45
100
--
20
50
(Note 4)
--
25
60
V_DS = 48 V, I_D = 20 A,
-- 11.5 15
V_GS = 10 V
--
3
--
(Note 4) _--
4.5
--
V
V/°C
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = 20 A
t_rr
Reverse Recovery Time
V_GS = 0 V, I_S = 20 A,
Q_rr
Reverse Recovery Charge
dI_F / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 450 μH, I_AS = 20 A, V_DD = 25 V, R_G = 25 Ω, starting T_J = 25°C.
3. I_SD ≤ 20 A, di/dt ≤ 300 A/μs, V_DD ≤ BV_DSS, starting T_J = 25°C.
4. Essentially Independent of Operating Temperature.
--
--
20
A
--
--
80
A
--
--
1.5
V
--
43
--
ns
--
50
--
nC
©2001 Fairchild Semiconductor Corporation
2
FQP20N06 Rev. C1
www.fairchildsemi.com