FQP18N20V2 Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. V_GS = 0 V
2. I_D = 250 μ A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
10²
10¹
※ Notes :
10⁰
1. T_C = 25 ^oC
2. T = 150 oC
J
3. Single Pulse
Operation in This Area
is Limited by R _DS(on)
100 us
1 ms
10 ms
DC
10^-1
10⁰
10¹
10²
V_DS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP18N20V2
20
15
10
5
0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
©2002 Fairchild Semiconductor Corporation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V_GS = 10 V
2. I_D = 9 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
Operation in This Area
10²
is Limited by R _DS(on)
100 us
1 ms
10¹
10 ms
10^{0 ※ Notes :}
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10^-1
10⁰
100 ms
DC
10¹
10²
V_DS, Drain-Source Voltage [V]
Figure 9-2. Maxiumum Safe Operating Area
for FQPF18N20V2
Rev. B, August 2002