FQP18N20V2 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET

FQP18N20V2/FQPF18N20V2
200V N-Channel MOSFET
QFET ^TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Features
• 18A, 200V, R_DS(on) = 0.14Ω @V_GS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
D
!
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current - Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQP18N20V2 FQPF18N20V2
200
18
18
11.9
11.9
72
72
± 30
340
18
12.3
6.5
123
40
0.99
0.32
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP18N20V2
1.01
0.5
62.5
FQPF18N20V2
3.1
--
62.5
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002