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FQP12N60 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
Notes :
1. VGS = 0 V
2. ID = 250 A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
102
101
100
10-1
100
Operation in This Area
is Limited by R
DS(on)
100 µs 10 µs
1 ms
10 ms
DC
 Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
 Notes :
1. V = 10 V
GS
2. ID = 6.0 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D = 0.5
1 0 -1
0 .2
0 .1
1 0 -2
0 .05
0 .02
0 .01
sin g le p u ls e
 N o tes :
1 . Z  JC(t) = 0 .7  /W M a x .
2 . D uty F acto r, D = t /t
12
3 . T JM - T C = P D M * Z  JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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