FQP12N60 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Characteristics
Top :
1V5^GV^S
10 V
8.0 V
7.0 V
10¹
6.5 V
6.0 V
Bottom : 5.5 V
10⁰
10^-1

Notes :
1. 250s Pulse Test
2. T_C = 25
10⁰
10¹
V_DS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.8
1.6
1.4
V_GS = 10V
1.2
V_GS = 20V
1.0
0.8
0.6
0.4
0.2
0.0
0
5
10
15
20
25
30
35
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2400
1800
1200
600
C_iss
C_oss
C_rss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd

Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
150

25

10⁰
-55

10^-1
2

Notes :
1. V = 50V
DS
2. 250s Pulse Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150
25


Notes :
1. V = 0V
GS
2. 250s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
V_DS = 120V
10
V_DS = 300V
V_DS = 480V
8
6
4
2

Note : I_D = 12 A
0
0
5
10
15
20
25
30
35
40
45
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000