FQP11N40C Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – FQP11N40C / FQPF11N40C N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ

Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. V_GS = 0 V
2. I_D = 250μA
-50
0
50
100
150
200
T_J, Junction Temperature [°C]
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. V_GS = 10 V
2. I_D = 5.25 A
-50
0
50
100
150
200
T_J, Junction Temperature [°C]
Figure 9-1. Maximum Safe Operating Area
of FQP11N40C
Figure 9-2. Maximum Safe Operating Area
of FQPF11N40C
10²
10¹
10⁰
10^-1
10⁰
Operation in This Area
is Limited by R _DS(on)
10 μs
100 μs
1 ms
10 ms
100 ms
DC
Notes :
1. T_C = 25°C
2. T_J = 150°C
3. Single Pulse
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
10²
10¹
10⁰
10^-1
10⁰
Operation in This Area
is Limited by R _DS(on)
10 μs
100 μs
1 ms
10 ms
100 ms
DC
Notes :
1. T_C = 25°C
2. T_J = 15°C
3. Single Pulse
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
12
10
8
6
4
2
0
25
50
75
100
125
150
T_C, Case Temperature [°C]
©2003 Fairchild Semiconductor Corporation
4
FQP11N40C / FQPF11N40C Rev. C1
www.fairchildsemi.com