FQP11N40C Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – FQP11N40C / FQPF11N40C N-Channel QFET® MOSFET 400 V, 10.5 A, 530 mΩ

Package Marking and Ordering Information
Device Marking
FQP11N40C
FQPF11N40C
Device
FQP11N40C
FQPF11N40C
Package
TO-220
TO-220F
Electrical Characteristics T_C = 25^oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
50 units
50 units
Min
Typ
Max Unit
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = 250 μA
400
ΔBV_{DSS Breakdown Voltage Temperature Coeffi-}
/ ΔT_J cient
I_D = 250 μA, Referenced to 25°C
--
I_DSS
Zero Gate Voltage Drain Current
V_DS = 400 V, V_GS = 0 V
V_DS = 320 V, T_C = 125°C
--
--
I_GSSF
Gate-Body Leakage Current, Forward
V_GS = 30 V, V_DS = 0 V
--
I_GSSR
Gate-Body Leakage Current, Reverse
V_GS = -30 V, V_DS = 0 V
--
On Characteristics
V_GS(th)
R_DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V_DS = V_GS, I_D = 250 μA
2.0
V_GS = 10 V, I_D = 5.25 A
--
g_FS
Forward Transconductance
V_DS = 40 V, I_D = 5.25 A
--
Dynamic Characteristics
C_iss
C_oss
Input Capacitance
Output Capacitance
V_DS = 25 V, V_GS = 0 V,
--
f = 1.0 MHz
--
C_rss
Reverse Transfer Capacitance
--
Switching Characteristics
t_d(on)
t_r
Turn-On Delay Time
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 200 V, I_D = 10.5 A,
R_G = 25 Ω
--
--
--
(Note 4)
--
V_DS = 320 V, I_D = 10.5 A,
--
V_GS = 10 V
--
(Note 4)
--
--
--
V
0.54
--
V/°C
--
1
μA
--
10
μA
--
100
nA
--
-100
nA
--
4.0
V
0.43 0.53
Ω
7.1
--
S
840 1090
pF
250
325
pF
85
110
pF
14
40
ns
89
190
ns
81
170
ns
81
170
ns
28
35
nC
4
--
nC
15
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
V_SD
Drain-Source Diode Forward Voltage
V_GS = 0 V, I_S = 10.5 A
t_rr
Reverse Recovery Time
V_GS = 0 V, I_S = 10.5 A,
Q_rr
Reverse Recovery Charge
dI_F / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 5.7 mH, I_AS = 10.5 A, V_DD = 50 V, R_G = 25 Ω, starting T_J = 25°C.
3. I_SD ≤ 10.5 A, di/dt ≤ 200 A/μs, V_DD ≤ BV_DSS, starting T_J = 25°C.
4. Essentially independent of operating temperature.
--
--
10.5
A
--
--
42
A
--
--
1.4
V
--
290
--
ns
--
2.4
--
μC
©2003 Fairchild Semiconductor Corporation
2
FQP11N40C / FQPF11N40C Rev. C1
www.fairchildsemi.com