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FQP10N60C_07 Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. V = 0 V
GS
2. I = 250µA
D
-50
0
50
100
150
200
T , Junction Temperature [°C]
J
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V = 10 V
GS
2. I = 4.75 A
D
-50
0
50
100
150
200
T , Junction Temperature [°C]
J
Figure 9-1. Maximum Safe Operating Area
for FQP10N60C
102
101
100
10-1
100
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
* Notes :
1. T = 25°C
C
2. T = 150°C
J
3. Single Pulse
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 10. Maximum Drain Current
vs. Case Temperature
10
8
6
4
2
0
25
50
75
100
125
150
T , Case Temperature [°C]
C
Figure 9-2. Maximum Safe Operating Area
for FQPF10N60C
102
101
100
10-1
10-2
100
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
* Notes :
1. T = 25°C
C
2. T = 150°C
J
3. Single Pulse
101
102
103
V , Drain-Source Voltage [V]
DS
4
FQP10N60C / FQPF10N60C Rev. C
www.fairchildsemi.com
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