FQP10N60C_07 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
10¹
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10⁰
10^-1
10⁰
* Notes :
1. 250µs Pulse Test
2. T = 25°C
C
10¹
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
1.5
V = 10V
GS
1.0
0.5
V = 20V
GS
0.0
0
* Note : T = 25°C
J
5
10
15
20
25
30
35
I , Drain Current [A]
D
Figure 2. Transfer Characteristics
10¹
150°C
25°C
10⁰
-55°C
10^-1
2
* Notes :
1. V = 40V
DS
2. 250µs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10¹
10⁰
10^-1
0.2
150°C
25°C
* Notes :
1. V = 0V
GS
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 5. Capacitance Characteristics
3000
2500
2000
1500
1000
500
0
10^-1
C
iss
C
oss
C
rss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
* Notes ;
1. V = 0 V
GS
2. f = 1 MHz
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 6. Gate Charge Characteristics
12
V = 120V
10
DS
V = 300V
DS
V = 480V
8
DS
6
4
2
* Note : I = 9.5A
D
0
0
10
20
30
40
50
Q , Total Gate Charge [nC]
G
3
FQP10N60C / FQPF10N60C Rev. C
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