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| FQI13N50C Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET | |||
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Package Dimensions (Continued)
1.2
1.1
1.0
0.9
â» Notes :
1. V =0V
2.
GS
ID =
250
μ
A
0.8
-100
-50
0
50
100
150
200
T, Junction Temperature[oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
102
is Limited by R DS(on)
10 µs
100 µs
1 ms
101
10 ms
100 ms
DC
100
10-1
100
â» Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
â» Notes :
1. VGS = 10 V
2. ID = 6.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [â]
Figure 10. Maximum Drain Current
vs Case Temperature
100
D = 0.5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le p u ls e
â» N o te s :
1. Zθ
(t)
JC
=
0 .6 4
â /W
M ax.
2 . D uty F a cto r, D = t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a ve P u lse D u ra tion [se c]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
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