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FQH90N15 Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – N-Channel Power MOSFET
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. V = 0 V
GS
2.
I
D
=
250
µA
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 9. Maximum Safe Operating Area
103
102
101
100
10-1
100
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1 ms
10 ms
DC
Notes :
1. T = 25 oC
C
2. T = 175 oC
J
3. Single Pulse
101
102
V , Drain-Source Voltage [V]
DS
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. V = 10 V
GS
2. I = 45 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 10. Maximum Drain Current
vs. Case Temperature
100
80
60
40
20
0
25
50
75
100
125
150
175
T , Case Temperature [oC]
C
Figure 11. Transient Thermal Response Curve
D =0.5
1 0 -1
0 .2
1 0 -2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
N o te s :
1 . Z (t) = 0.4 oC /W M a x.
? JC
2 . D u ty F a c to r, D = t /t
12
3 . T - T = P * Z (t)
JM
C
DM
? JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
4
FQH90N15 / FQA90N15 Rev. B
www.fairchildsemi.com
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