FQH90N15 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel Power MOSFET

FQH90N15 / FQA90N15
N-Channel Power MOSFET
Features
• 90A, 150V, R_DS(on) = 0.018Ω @V_GS = 10 V
• Low gate charge (typical 220 nC)
• Low C_rss (typical 200 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
QFET^®
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for low volt-
age applications such as audio amplifire, high efficiency switch-
ing for DC/DC converters, and DC motor control, uninterrupted
power supply.
GD _S
TO-247
FQH Series
G DS
TO-3P
FQA Series
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Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FQH90N15/FQA90N15
150
90
63.5
360
±25
1400
90
37.5
6.0
375
2.5
-55 to +175
300
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.4
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
1
FQH90N15 / FQA90N15 Rev. B
www.fairchildsemi.com