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FQH90N10V2 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. V = 0 V
GS
2. I = 250µA
D
-50
0
50
100
150
200
T , Junction Temperature [°C]
J
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V = 10 V
GS
2. I = 45 A
D
-50
0
50
100
150
200
T , Junction Temperature [°C]
J
Figure 9. Maximum Safe Operating Area
Operation in This Area
103
is Limited by R
DS(on)
10 µs
100 µs
102
1 ms
10 ms
DC
101
100
10-1
100
* Notes :
1. T = 25°C
C
2. T = 175°C
J
3. Single Pulse
101
102
V , Drain-Source Voltage [V]
DS
Figure 10. Maximum Drain Current
vs. Case Temperature
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
TC, Case Temperature [°C]
Figure 11. Transient Thermal Response Curve
100
D = 0.5
10 -1
0.2
0.1
0.05
0.02
0.01
10 -2
single pulse
* N otes :
1. Z (t) = 0.45 °C /W M ax.
θJC
2. D uty Factor, D =t /t
12
3. T - T = P * Z (t)
JM
C
DM
θJC
PDM
t1
t2
10 -5
1 0-4
10 -3
1 0-2
1 0-1
100
101
t , Square W ave Pulse Duration [sec]
1
4
FQH90N10V2 Rev. A
www.fairchildsemi.com
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