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FQH90N10V2 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 100V N-Channel MOSFET
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Package Marking and Ordering Information
Device Marking
HV290N10
Device
FQH90N10V2
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
100
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 100V, VGS = 0V
--
VDS = 80V, TC = 150°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
2.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 52.5A
--
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 52.5A
(Note 4) --
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
--
Coss
Output Capacitance
f = 1.0MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 100V, ID = 90A
RG = 25Ω
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 80V, ID = 90A
VGS = 10V
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 105A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 90A
dIF/dt =100A/µs
--
--
--
--
(Note 4)
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.22mH, IAS = 105A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 105A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ.
--
0.1
--
--
--
--
--
8.5
72
4730
1180
300
52
492
304
355
147
28
60
--
--
--
114
0.54
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0
V
10 mΩ
--
S
6150 pF
1530 pF
390 pF
114 ns
994 ns
618 ns
720 ns
191 nC
--
nC
--
nC
105
A
420
A
1.4
V
--
ns
--
µC
2
FQH90N10V2 Rev. A
www.fairchildsemi.com
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