FQG4902 Datasheet, PDF (4/12 Pages) Fairchild Semiconductor – 250V Dual N & P-Channel MOSFET

Typical Characteristics : N-Channel
V_GS
Top : 15.0 V
10.0 V
8.0 V
6.0 V
5.5 V
5.0 V
10⁰
4.5 V
Bottom : 4.0 V
10^-1
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_A = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
10
8
V = 10V
GS
6
V = 20V
GS
4
2
※ Note : T_J = 25℃
0
0
2
4
6
8
10
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
400
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C =C
rss gd
300
C
iss
C
oss
200
100
C
rss
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10⁰
150℃
25℃
-55℃
10^-1
0
※ Notes :
1.
2.
2V5^DS0μ⁼
40V
s Pulse
Test
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃ 25℃
※ Notes :
1. V = 0V
2. 25^G0^Sμ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 50V
DS
10
V = 125V
DS
V = 200V
DS
8
6
4
2
※ Note : I_D = 0.54 A
0
0
2
4
6
8
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002