FQG4902 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – 250V Dual N & P-Channel MOSFET

FQG4902
250V Dual N & P-Channel MOSFET
QFET ^TM
General Description
These dual N and P-channel enhancement mode power
field effect transistors are produced using Fairchild’s
proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on half bridge.
Features
• N-Channel 0.54A, 250V, R_DS(on) = 2.0 Ω @ V_GS = 10 V
P-Channel -0.54A, -250V, R_DS(on) = 2.0 Ω @ V_GS = -10 V
• Low gate charge ( typical N-Channel 6.0 nC)
( typical P-Channel 12.0 nC)
• Fast switching
• Improved dv/dt capability
D2
D2
D1
D1
5
4
6
3
G2
S2
G1
7
2
S1
8-DIP ^{Pin #1}
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
dv/dt
P_D
T_J, T_STG
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_A = 25°C)
- Continuous (T_A = 100°C)
Drain Curent - Pulsed
Gate-Source Voltage
Peak Diode Recovery dv/dt
Power Dissipation (T_A = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
(Note 1)
(Note 2)
N-Channel
P-Channel
250
-250
0.54
-0.54
0.34
-0.34
4.32
-4.32
± 30
5.5
-5.5
1.4
0.011
-55 to +150
Thermal Characteristics
Symbol
Parameter
Typ
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 5a)
--
Max
90
Units
V
A
A
A
V
V/ns
W
W/°C
°C
Units
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002