FMG2G50US120 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Molding Type Module

14
Common Emitter
12
V_GE = ± 15 V, R_G = 10Ω
T_C = 25℃ ℃℃
1 0 T_C = 125℃ ------
8
6
4
2
0
30
40
50
60
70
C o ll e c t o r C u rr e n t, I [ A ]
C
Eon
E o ff
80
Fig 7. Switching Loss vs. Collector Current
Common Emitter
V_CC = 600 V, V_GE = ± 15 V
I_C = 50 A
1000
T_C = 25℃ ℃℃
T_C = 125℃ ------
T o ff
100
Tf
0
6
12
18
24
30
36
42
G ate R e sista n c e, R [
G _Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
15
Common Emitter
12
R_L = 12 Ω
V_CE = 600V
T_C = 25℃
9
6
3
0
0
50 100 150 200 250 300 350 400
Gate Charge, Qg [ nC ]
Fig 11. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
Common Emitter
1000
V_CC = 600 V, V_GE = ± 15 V
I_C = 50 A
T_C = 25℃ ℃℃
T_C = 125℃ ------
Ton
Tr
100
0
6
12
18
24
30
36
42
G ate R e sista n c e, R [
G _Ω]
Fig 8. Turn-on Characteristics vs.
Gate Resistance
15
Common Emitter
12
V_CC = 600 V, V_GE = ± 15 V
I_C = 50 A
T_C = 25℃ ℃℃
T_C = 125℃ ------
9
Eon
6
E o ff
3
0
0
6
12
18
24
30
36
42
G ate R e sista n c e, R [ ]
G_Ω
Fig 10. Switching Loss vs. Gate Resistance
120
Common Cathode
1 0 0 ^{VGE = 0V}
T_C = 25℃
T_C = 125℃
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Forward Voltage, V_F [V]
Fig 12. Forward Characteristics(diode)
FMG2G50US120 Rev. A