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FMG2G50US120 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Molding Type Module
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Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
Gate - Emitter Leakage Current
VGE = 0V, IC = 3mA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
IC =50mA, VCE = VGE
IC = 50A, VGE = 15V
Min. Typ. Max. Units
1200
--
--
--
--
--
V
0.6
--
V/°C
--
3
mA
-- ± 100 nA
5.0
7.0
8.5
V
--
2.6 3.0
V
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC = 600 V, IC =50A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 50A,
RG =10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 600 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC =50A,
VGE = 15V
--
180
--
ns
--
80
--
ns
--
400
--
ns
--
65 150
ns
--
4.68
--
mJ
--
3.48
--
mJ
--
175
--
ns
--
75
--
ns
--
390
--
ns
--
120
--
ns
--
5.6
--
mJ
--
4.4
--
mJ
10
--
--
us
--
400
--
nC
--
60
--
nC
--
210
--
nC
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
Test Conditions
IF = 50A
IF = 50A
di / dt = 700 A/us
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
2.3
2.2
160
220
29
36
2320
3960
Max.
3.0
--
--
--
--
--
--
--
Unit
s
V
ns
A
nC
Thermal Characteristics
Symbol
RθJC
RθJC
RθJC
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
(Conductive grease applied)
Weight of Module
Typ.
--
--
0.035
240
Max.
0.39
0.47
--
--
Units
°C/W
°C/W
°C/W
g
©2004 Fairchild Semiconductor Corporation
FMG2G50US120 Rev. A
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