FMG2G300LS60E Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – Molding Type Module

1000
Common Emitter
V_CC = 300V, V_GE = ± 15V
Ic = 300A
T_C = 25℃ ℃℃
T_C = 125℃ ------
E o ff
100
Eon
10
10
20
30
40
50
G ate R e sista n c e, R [ ]
G_Ω
Fig 7. Switching Loss vs. Gate Resistance
400
Common Cathode
V_GE = 0V
300
T_C = 25℃
T_C = 125℃
200
100
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
F o r w a r d V o lt a g e , V [ V ]
F
Fig 9. Forward Characteristics (diode)
15
Common Emitter
12
I_C = 300A
V_CC = 300V
T_C = 25 ^oC
9
6
3
0
0
200
400
600
800
1000
G ate C h arg e, Q [n C ]
g
Fig 8. Gate Charge Characteristics
200
Common Cathode
1 0 0 ^{di/dt = 600A/㎲}
T_C = 25℃
T_C = 100℃
I_rr
10
t_rr
5
0
50
100
150
200
250
300
F o r w a r d C u rr e n t, I [ A ]
F
Fig 10. Reverse Recovery Characteristics(diode)
©2004 Fairchild Semiconductor Corporation
FMG2G300LS60E Rev. A