FMG2G150US60 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Molding Type Module

Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 150A
T_C = 25℃ ━━
1 0 T_C = 125℃ ------
E o ff
Eon
1
5
10
15
20
25
30
G ate R e sista n c e, R g [ ]
Ω
Fig 7. Switching Loss vs. Gate Resistance
Common Emitter
1000
V_GE = ± 15V, R_G = 2Ω
T_C = 25℃ ━━
T_C = 125℃ ------
T o ff
Tf
100
100
150
200
250
300
C o ll e c t o r C u rr e n t, I [ A ]
C
Fig 9. Turn-Off Characteristics vs.
Collector Current
15
Common Emitter
12
I_C = 150A
V_CC = 300V
T_C = 25 ^oC
9
6
3
0
0
100
200
300
400
500
G ate C h arg e, Q [n C ]
g
Fig 11. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
Common Emitter
1000
V_GE = ± 15V, R_G = 2Ω
T_C = 25℃ ━━
T_C = 125℃ ------
Ton
Tr
100
100
150
200
250
300
C o ll e c t o r C u rr e n t, I [ A ]
C
Fig 8. Turn-On Characteristics vs.
Collector Current
Common Emitter
V_GE = ± 15V, R_G = 2Ω
T_C = 25℃ ━━
T_C = 125℃ ------
10
E o ff
Eon
1
100
150
200
250
300
C o ll e c t o r C u r r e n t, I [ A ]
C
Fig 10. Switching Loss vs. Collector Current
400
Common Cathode
350
V_GE = 0V
T_C = 25℃
300 ^{TC = 125℃}
250
200
150
100
50
0
0
1
2
3
4
Forward Voltage, V_F [V]
Fig 12. Forward Characteristics(diode)
FMG2G150US60 Rev. A