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FMG2G150US60 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – Molding Type Module
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Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
Gate - Emitter Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
IC = 150mA, VCE = VGE
IC = 150A, VGE = 15V
Min. Typ. Max. Units
600
--
--
V
--
0.6
--
V/°C
--
--
250
uA
--
-- ± 100 nA
5.0
6.5
8.5
V
--
2.1 2.7
V
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC = 300 V, IC = 150A,
RG = 2Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 150A,
RG = 2Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC =150A,
VGE = 15V
--
140
--
ns
--
80
--
ns
--
120
--
ns
--
130 250
ns
--
2.3
--
mJ
--
4.7
--
mJ
--
180
--
ns
--
90
--
ns
--
150
--
ns
--
270
--
ns
--
3.1
--
mJ
--
7.7
--
mJ
10
--
--
us
--
460
--
nC
--
130
--
nC
--
190
--
nC
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
VFM
Parameter
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
Test Conditions
IF = 150A
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
IF = 150A
di / dt = 300 A/us
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
1.8
90
130
15
22
675
1430
Max.
2.8
--
130
--
20
--
1270
--
Units
V
ns
A
nC
Thermal Characteristics
Symbol
RθJC
RθJC
RθJC
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
(Conductive grease applied)
Weight of Module
Typ.
--
--
0.045
240
Max.
0.21
0.48
--
--
Units
°C/W
°C/W
°C/W
g
©2003 Fairchild Semiconductor Corporation
FMG2G150US60 Rev. A
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