FGP15N60UNDF Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 600V, 15A Short Circuit Rated IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
80
T_C = 25^oC
70
20V
17V
15V
60
50
V_GE = 12V
40
30
20
10
0
0.0 1.5 3.0 4.5 6.0 7.5 9.0
Collector-Emitter Voltage, V_CE [V]
Figure 2. Typical Output Characteristics
80
T_C = 125^oC
70
20V
17V
15V
60
50
40
V_GE = 12V
30
20
10
0
0.0 1.5 3.0 4.5 6.0 7.5 9.0
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
80
70
Common Emitter
V_GE = 15V
60 ^TC ^{= 25oC}
T_C = 125^oC
50
40
30
20
10
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
80
Common Emitter
70 VCE = 20V
T_C = 25^oC
60 _{TC = 125}o_C
50
40
30
20
10
0
0
3
6
9
12
15
Gate-Emitter Voltage,V_GE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4.5
Common Emitter
4.0 ^VGE ^{= 15V}
30A
3.5
3.0
2.5
15A
2.0
1.5
I_C = 7.5A
1.0
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
15A
4
30A
I_C = 7.5A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGP15N60UNDF Rev. A
4
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