English
Language : 

FGP15N60UNDF Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 600V, 15A Short Circuit Rated IGBT
◁
Package Marking and Ordering Information
Device Marking
Device
FGP15N60UNDF FGP15N60UNDF
Package
TO220
Packaging
Type
Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250µA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 15mA, VCE = VGE
IC = 15A, VGE = 15V
IC = 15A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
VCC = 400V, IC = 15A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 15A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCC = 350V,
RG = 100Ω, VGE = 15V,
TC = 150oC
600
-
-
V
-
-
1
mA
-
-
±10
µA
5.5
6.8
8.5
V
-
2.2
2.7
V
-
2.7
-
V
-
619
-
pF
-
80
-
pF
-
24
-
pF
-
9.3
-
ns
-
9.8
-
ns
-
54.8
-
ns
-
9.9
12.8
ns
-
0.37
-
mJ
-
0.067
-
mJ
-
0.44
-
mJ
-
8.9
-
ns
-
9.9
-
ns
-
56.6
-
ns
-
13.2
-
ns
-
0.54
-
mJ
-
0.11
-
mJ
-
0.65
-
mJ
10
-
-
µs
FGP15N60UNDF Rev. A
2
www.fairchildsemi.com
 ▷