FGH50N6S2 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT

Typical Performance Curves T_J = 25°C unless otherwise noted
2500
R_G = 3Ω, L = 200µH, V_CE = 390V
2250
2000
1750
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
1500
1250
1000
750
500
250
0
0
T_J = 25^oC, T_J = 125^oC, V_GE = 15V
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
1400
R_G = 3Ω, L = 200µH, V_CE = 390V
1200
1000
800
T_J = 125^oC, V_GE = 10V, V_GE = 15V
600
400
200
0
0
T_J = 25^oC, V_GE = 10V, V_GE = 15V
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
25
R_G = 3Ω, L = 200µH, V_CE = 390V
20
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
15
T_J = 25^oC, T_J = 125^oC, V_GE = 15V
10
5
0
0
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
70
R_G = 3Ω, L = 200µH, V_CE = 390V
60
50
40
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
30
20
10
0
0
T_J = 25^oC, T_J = 125^oC, V_GE =15V
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
100
R_G = 3Ω, L = 200µH, V_CE = 390V
90
80
V_GE = 10V, V_GE = 15V, T_J = 125^oC
70
125
R_G = 3Ω, L = 200µH, V_CE = 390V
100
75
T_J = 125^oC, V_GE = 10V, V_GE = 15V
60
50
40
0
V_GE = 10V, V_GE = 15V, T_J = 25^oC
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
50
T_J = 25^oC, V_GE = 10V, V_GE = 15V
25
0
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 12. Fall Time vs Collector to Emitter
Current
©2003 Fairchild Semiconductor Corporation
FGH50N6S2 RevA3