FGH50N6S2 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT

Package Marking and Ordering Information
Device Marking
50N6S2
Device
FGH50N6S2
Package
TO-247
Reel Size
Tube
Tape Width
N/A
Quantity
30
Electrical Characteristics T_J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BV_CES
BV_ECS
I_CES
I_GES
Collector to Emitter Breakdown Voltage I_C = 250µA, V_GE = 0
Emitter to Collector Breakdown Voltage I_C = -10mA, V_GE = 0
Collector to Emitter Leakage Current V_CE = 600V T_J = 25°C
T_J = 125°C
Gate to Emitter Leakage Current
V_GE = ± 20V
600
-
-
V
20
-
-
V
-
-
250
µA
-
-
2.8
mA
-
-
±250 nA
On State Characteristics
V_CE(SAT) Collector to Emitter Saturation Voltage
V_EC Diode Forward Voltage
I_C = 30A,
V_GE = 15V
I_EC = 30A
T_J = 25°C
T_J = 125°C
-
1.9
2.7
V
-
1.7
2.2
V
-
2.2
2.6
V
Dynamic Characteristics
Q_G(ON) Gate Charge
V_GE(TH) Gate to Emitter Threshold Voltage
V_GEP Gate to Emitter Plateau Voltage
I_C = 30A,
V_CE = 300V
V_GE = 15V
V_GE = 20V
I_C = 250µA, V_CE = V_GE
I_C = 30A, V_CE = 300V
-
70
85
nC
-
90
110
nC
3.5
4.3
5.0
V
-
6.5
8.0
V
Switching Characteristics
SSOA Switching SOA
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON1
E_ON2
E_OFF
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON1
E_ON2
E_OFF
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
T_J = 150°C, V_GE = 15V, R_G = 3Ω 150
-
-
A
L = 100µH, V_CE = 600V
IGBT and Diode at T_J = 25°C,
I_CE = 30A,
V_CE = 390V,
V_GE = 15V,
R_G = 3Ω
L = 200µH
-
13
-
ns
-
15
-
ns
-
55
-
ns
-
50
-
ns
-
260
-
µJ
Test Circuit - Figure 26
-
330
-
µJ
-
250 350
µJ
IGBT and Diode at T_J = 125°C
I_CE = 30A,
V_CE = 390V,
V_GE = 15V,
R_G = 3Ω
L = 200µH
Test Circuit - Figure 26
-
13
-
ns
-
15
-
ns
-
92
150
ns
-
88
100
ns
-
260
-
µJ
-
490 600
µJ
-
575 850
µJ
Thermal Characteristics
R_θJC Thermal Resistance Junction-Case
IGBT
-
-
0.27 °C/W
NOTE:
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turn-on loss
the same T_J
3_tJh._{EeTDuiErnnpC-uOStfftpauEnlnsdeearrgadynNdLooe.sn2sd4i(-nE1gOMaFeFt} )tthhioseddpfeoofirinnMtewdeahasesuretrhetemheienntcetogollrfeaPcl _{otoowfretchrueDrrienevsnittcaeenqtTauunarenlso-OuzesffrpSoow(wIiCtecE}rhi=lnogs0sALso).tsaAsr.ltliTndhgeivsaitcteethsstewmtreeartiehlinotgedspeterdodgdepueocr-f
es the true total Turn-Off Energy Loss.
©2003 Fairchild Semiconductor Corporation
FGH50N6S2 RevA3