FGB40N60SM Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 600V, 40A Field Stop IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
120
T_C = 25^oC
20V
12V
15V
100
10V
Figure 2. Typical Output Characteristics
120
T_C = 175^oC
100
20V
12V
15V
10V
80
80
60
60
40
V_GE = 8V
40
V_GE = 8V
20
20
0
0
2
4
6
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
120
Common Emitter
100 ^{VGE = 15V}
T_C = 25^oC
80 ^{TC = 175oC}
60
0
0
2
4
6
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
120
Common Emitter
V_CE = 20V
T_C = 25^oC
90 _{TC = 175}o_C
60
40
20
0
0
1
2
3
4
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
Common Emitter
V_GE = 15V
80A
2.5
30
0
0
2
4
6
8
10 12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = -40^oC
16
2.0
40A
1.5
I_C = 20A
1.0
25 50 75 100 125 150 175
Collector-EmitterCase Temperature, T_C [^oC]
12
8
40A
80A
4
I_C = 20A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGB40N60SM Rev. A
4
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