FGB40N60SM Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V, 40A Field Stop IGBT

November 2011
FGB40N60SM
600V, 40A Field Stop IGBT
Features
• Maximum Junction Temperature : T_J =175^oC
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: V_CE(sat) =1.9V(Typ.) @ I_C = 40A
• High input impedance
• Fast switching
• Tighten Parameter Distribution
• RoHS compliant
• IR Reflow Only
Applications
• Welding, PFC
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop 2nd generation IGBTs offer the optimum perfor-
mance for welding and PFC applications where low conduction
and switching losses are essential.
COLLECTOR
(FLANGE)
TO-263AB/D2-PAK
GC E
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
Ratings
600
± 20
80
40
120
349
174
-55 to +175
-55 to +175
300
Units
V
V
A
A
A
W
W
o_C
o_C
o_C
©2011 Fairchild Semiconductor Corporation
1
FGB40N60SM Rev. A
www.fairchildsemi.com