FGA20S140P Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Shorted AnodeTM IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
T_C = 175^oC
16
12
8
20A
4
I_C = 10A
40A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate Charge Characteristics
15
Common Emitter
T_C = 25^oC
12
400V
600V
V_CC = 200V
9
6
3
0
0 30 60 90 120 150 180 210
Gate Charge, Q_g [nC]
Figure 11. Turn-On Characteristics vs
Gate Resistance
200
t_r
100
10
5
10
t_d(on)
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 20A
T_C = 25^oC
T_C = 175^oC
20 30 40 50 60 70
Gate Resistance, R_G [Ω]
Figure 8. Capacitance Characteristics
10000
C_ies
1000
100
C_oes
C_res
10
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
1
5
10 15 20 25 30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteristics
100
10µs
10
100µs
1ms
1
10ms
DC
0.1
0.01
1
*Notes:
1. T_C = 25^oC
2. T_J = 175^oC
3. Single Pulse
10
100
Collector-Emitter Voltage, V_CE [V]
1000 2000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
10000
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 20A
T_C = 25^oC
T_C = 175^oC
t_d(off)
1000
t_f
100
0
10 20 30 40 50 60 70
Gate Resistance, R_G [Ω]
4
FGA20S140P Rev. C1
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