FGA20S140P Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Shorted AnodeTM IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
160
T_C = 25^oC
140
20V
15V
V_GE = 17V
120
12V
100
80
60
40
20
0
0.0
10V
9V
8V
1.5
3.0
4.5
6.0
7.5
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteritics
120
Common Emitter
100
V_GE = 15V
T_C = 25^oC
80 ^{TC = 175oC}
60
40
20
0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.5
Common Emitter
V_GE = 15V
3.0
40A
2.5
20A
2.0
I_C = 10A
1.5
1.0
25 50 75 100 125 150 175
Collector-EmitterCase Temperature, T_C [^oC]
Figure 2. Typical Output Characteristics
160
T_C = 175^oC
140
V_GE = 20V
17V
15V
120
100
80
12V
60
10V
40
9V
20
8V
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
100
Common Emitter
V_CE = 20V
80 TC = 25^oC
T_C = 175^oC
60
40
20
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
T_C = 25^oC
15
10
I_C = 10A
20A 40A
5
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
3
FGA20S140P Rev. C1
www.fairchildsemi.com