FGA15N120ANTD_1 Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 1200V NPT Trench IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200
T = 25^oC
C
150
20V
17V
15V
12V
V = 10V
GE
100
50
0
0
2
4
6
8
10
Collector-Emitter Voltage, V [V]
CE
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
Common Emitter
V = 15V
GE
I = 24A
C
2.5
I = 15A
C
2.0
1.5
25
50
75
100
125
150
Case Temperature, T [oC]
C
Figure 5. Saturation Voltage vs. V_GE
Common Emitter
16
T = 125oC
C
12
8
4
24A _15A
I = 7.5A
0
C
0
4
8
12
16
20
Gate-Emitter Voltage, V [V]
GE
Figure 2. Typical Saturation Voltage
Characteristics
150
Common Emitter
V = 15V
GE
120
T = 25oC
C
T = 125oC
C
90
60
30
0
0
2
4
6
Collector-Emitter Voltage, V [V]
CE
Figure 4. Saturation Voltage vs. V_GE
Common Emitter
16
T = 25oC
C
12
8
4
24A ^15A
I = 7.5A
0
C
0
4
8
12
16
20
Gate-Emitter Voltage, V [V]
GE
Figure 6. Capacitance Characteristics
3500
3000
Ciss
2500
2000
1500
1000
Common Emitter
V = 0V, f = 1MHz
GE
T = 25oC
C
500
Crss
Coss
0
0.1
1
10
Collector-Emitter Voltage, V [V]
CE
4
FGA15N120ANTD Rev. A1
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