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| FGA15N120ANTD_1 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 1200V NPT Trench IGBT | |||
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Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 15A
trr
Diode Reverse Recovery Time
IF = 15A
dI/dt = 200 A/μs
Irr
Diode Peak Reverse Recovery Cur-
rent
Qrr
Diode Reverse Recovery Charge
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.7
1.8
210
280
27
31
2835
4340
Max.
2.7
--
330
--
40
--
6600
--
Units
V
ns
A
nC
3
FGA15N120ANTD Rev. A1
www.fairchildsemi.com
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