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| FDZ191P_0612 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – P-Channel 1.5V PowerTrench® WL-CSP MOSFET | |||
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Typical Characteristics TJ = 25°C unless otherwise noted
5
2000
ID = -1A
4
VDD = -5V
1000
Ciss
3
VDD = -10V
2
VDD = -15V
1
0
0
2
4
6
8
10
12
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Coss
100 f = 1MHz
VGS = 0V
Crss
50
0.1
1
10 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
4.0
3.5
3.0
VGS = -4.5V
2.5
2.0
1.5
VGS = - 2.5V
1.0
0.5
RθJA = 83oC/W
0.0
25
50
75
100
125
150
TA, CASE TEMPERATURE (oC)
Figure 9. Maximum Continuous Drain
Current vs Ambient Temperature
30
10
100us
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.1 SINGLE PULSE
TJ = MAX RATED
RθJA = 140oC/W
TA = 25OC
0.01
0.1
1
1ms
10ms
100ms
1s
10s
DC
10
80
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 10. Forward Bias Safe
Operating Area
50
VGS = -10V
10
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----5---0-----â-----T---A---
125
TA = 25oC
1
SINGLE PULSE
0.5
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation
FDZ191P Rev.F1 (W)
4
www.fairchildsemi.com
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