FDZ191P_0612 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel 1.5V PowerTrench® WL-CSP MOSFET

December 2006
FDZ191P
P-Channel 1.5V PowerTrench^® WL-CSP MOSFET
tm
-20V, -1A, 85mΩ
Features
General Description
„ Max r_DS(on) = 85mΩ at V_GS = -4.5V, I_D = -1A
„ Max r_DS(on) = 123mΩ at V_GS = -2.5V, I_D = -1A
„ Max r_DS(on) = 200mΩ at V_GS = -1.5V, I_D = -1A
„ Occupies only 1.5 mm² of PCB area Less than 50% of the
area of 2 x 2 BGA
„ Ultra-thin package: less than 0.65 mm height when mounted
to PCB
„ RoHS Compliant
Designed on Fairchild's advanced 1.5V PowerTrench process
with state of the art "low pitch" WLCSP packaging process, the
FDZ191P minimizes both PCB space and r_DS(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge, and low r_DS(on).
Application
„ Battery management
„ Load switch
„ Battery protection
S
S
D
S
D
PIN 1
PIN 1
G
S
G
BOTTOM
TOP
D
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-3
-15
1.5
0.9
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
83
(Note 1b)
140
°C/W
Device Marking
1
Device
FDZ191P
Package
WL-CSP
Reel Size
7’’
Tape Width
8mm
Quantity
5000 units
©2006 Fairchild Semiconductor Corporation
1
FDZ191P Rev.F1 (W)
www.fairchildsemi.com