FDY3000NZ_07 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET

Typical Characteristics
5
I_D = 600mA
4
3
V_DS = 5V
10V
15V
2
1
0
0
0.2
0.4
0.6
0.8
1
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
1 ^RDS(ON) ^LIMIT
0.1
V_GS = 4.5V
SINGLE PULSE
R_TJA = 280^oC/W
T_A = 25^oC
1ms
10ms
1s ^100ms
10s
DC
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
100
90
80
70
60
50
40
30
20
10
C_rss
0
0
C_iss
C_oss
f = 1MHz
V_GS = 0 V
4
8
12
16
20
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
0
0.0001 0.001 0.01
0.1
1
t₁, TIME (sec)
SINGLE PULSE
R_TJA = 280°C/W
T_A = 25°C
10
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
R_TJA(t) = r(t) *R_TJA
R_TJA =280 °C/W
P(pk)
t₁
t₂
TJ - TA = P *R_TJA(t)
Duty Cycle, D = t₁ / t₂
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDY3000NZ Rev B
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