FDY3000NZ_07 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET

January 2007
January 2007
FDY3000NZ
tm
DualN-Channel2.5V Specified PowerTrench^“ MOSFET
GeneralDescription
This Dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trenchprocessto optimizetheR_DS(ON)@ V_GS = 2.5v.
Applications
x Li-Ion Battery Pack
Features
 x 600 mA,20 V RDS(ON)= 700 m: @ VGS = 4.5 V
RDS(ON)= 850 m: @ VGS = 2.5 V
x ESD protection diode (note 3)
x RoHS Compliant
6
5
4
S₁ 1
G_{1 2}
1
2
3
D₂ 3
Absolute M axim um Ratings TA=25^oC unlessotherwisenoted
Sym bol
Param eter
V_DSS
V_GSS
I_D
P_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1b)
T_J,T_STG
OperatingandStorageJunction Temperature
Range
Ratings
20
r 12
600
1000
625
446
–55 to +150
Therm alCharacteristics
R_TJA
ThermalResistance,Junction-to-Ambient (Note1a)
R_TJA
ThermalResistance,Junction-to-Ambient (Note1b)
PackageMarking and Ordering Inform ation
Device M arking
Device
ReelSize
C
FDY3000NZ
7 ’’
200
280
Tape w idth
8 mm
6 D1
5 G₂
4 S₂
Units
V
V
mA
mW
qC
qC/W
Quantity
3000 units
”2007 FairchildSemiconductor Corporation
FDY3000NZ RevB
www.fairchildsem i.com